Fermi-Dirac statistics with single conduction level
Have you ever wondered how Fermi-Dirac statistics arises? I may have wondered during my bachelor degree studies, but now I only remember derivation done by the means of combinatorics. In this post I continue my wandering from a perspective of numerical simulation of a highly simplified system.
In the previous post we have built a model in which particles may freely jump between the energy levels (restricted only by the Pauli exclusion principle and Boltzmann statistics). This is not necessarily possible in real life systems. In semiconductors individual traps may have a single characteristic trap depth, or multiple depths which would not span full spectrum of available trap depths. In such case we need to assume existence of a conduction band energy level, which allows particles to travel between different traps.
Let us examine this particular case in this post.